? semiconductor components industries, llc, 2013 september, 2013 ? rev. 1 1 publication order number: njw3281/d NJW3281G (npn) njw1302g (pnp) complementary npn-pnp silicon power bipolar transistors the NJW3281G and njw1302g are power transistors for high power audio, disk head positioners and other linear applications. features ? exceptional safe operating area ? npn/pnp gain matching within 10% from 50 ma to 5 a ? excellent gain linearity ? high bvceo ? high frequency ? these devices are pb ? free and are rohs compliant benefits ? reliable performance at higher powers ? symmetrical characteristics in complementary configurations ? accurate reproduction of input signal ? greater dynamic range ? high amplifier bandwidth applications ? high ? end consumer audio products ? home amplifiers ? home receivers ? professional audio amplifiers ? theater and stadium sound systems ? public address systems (pas) maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ceo 250 vdc collector ? base voltage v cbo 250 vdc emitter ? base voltage v ebo 5.0 vdc collector ? emitter voltage ? 1.5 v v cex 250 vdc collector current ? continuous i c 15 adc collector current ? peak (note 1) i cm 30 adc base current ? continuous i b 1.6 adc total power dissipation @ t c = 25 c derate above 25 c p d 200 1.43 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 0.625 c/w thermal resistance, junction ? to ? ambient r ja 40 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 ms, duty cycle < 10%. device package shipping ordering information 15 amperes complementary silicon power transistors 250 volts 200 watts http://onsemi.com njw1302g to ? 3p (pb ? free) 30 units/rail NJW3281G to ? 3p (pb ? free) 30 units/rail to ? 3p case 340ab styles 1,2,3 xxxx = 0281 or 0302 g = pb ? free package a = assembly location y = year ww = work week njwxxxg ayww marking diagram 1 2 3 4 123 1 base emitter 3 collector 2, 4 1 base emitter 3 collector 2, 4 pnp npn
NJW3281G (npn) njw1302g (pnp) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 250 ? ? vdc collector cutoff current (v cb = 250 vdc, i e = 0) i cbo ? ? 50 adc emitter cutoff current (v eb = 5 vdc, i c = 0) i ebo ? ? 5 adc second breakdown second breakdown collector with base forward biased (v ce = 50 vdc, t = 1 s (non ? repetitive) i s/b 4 ? ? adc on characteristics dc current gain (i c = 100 madc, v ce = 5 vdc) (i c = 1 adc, v ce = 5 vdc) (i c = 3 adc, v ce = 5 vdc) (i c = 5 adc, v ce = 5 vdc) (i c = 8 adc, v ce = 5 vdc) h fe 75 75 75 60 45 ? ? ? ? ? 150 150 150 ? ? ? collector ? emitter saturation voltage (i c = 8 adc, i b = 0.8 adc) v ce(sat) ? 0.4 0.6 vdc base ? emitter on voltage (i c = 8 adc, v ce = 5 vdc) v be(on) ? ? 1.5 vdc dynamic characteristics current ? gain ? bandwidth product (i c = 1 adc, v ce = 5 vdc, f test = 1 mhz) f t ? 30 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob ? ? 600 pf
NJW3281G (npn) njw1302g (pnp) http://onsemi.com 3 typical characteristics i c , collector current (a) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product pnp njw1302g npn NJW3281G i c , collector current (a) 0 10 20 30 40 50 60 0.1 1 10 f ta u , current bandwidth product (mhz) v ce = 10 v t j = 25 c f test = 1 mhz 5 v 0 20 40 60 80 0.1 1 10 f ta u , current bandwidth product (mhz) v ce = 10 v 5 v t j = 25 c f test = 1 mhz 10 100 1000 0.01 0.1 1 10 100 125 c 25 c ? 30 c v ce = 5 v i c , collector current (a) h fe , dc current gain figure 3. dc current gain 10 100 1000 0.1 1 10 100 i c , collector current (a) figure 4. dc current gain h fe , dc current gain v ce = 5 v 125 c 25 c ? 30 c 10 100 1000 0.01 0.1 1 10 100 h fe , dc current gain i c , collector current (a) figure 5. dc current gain 125 c 25 c ? 30 c v ce = 20 v 10 100 1000 0.1 1 10 10 i c , collector current (a) figure 6. dc current gain v ce = 20 v 125 c 25 c ? 30 c h fe , dc current gain
NJW3281G (npn) njw1302g (pnp) http://onsemi.com 4 typical characteristics 0.01 0.1 1 0.001 0.01 0.1 1 collector ? emitter satura- tion voltage (v) i b , base current (a) figure 7. saturation region t j = 25 c i c = 0.1 a 0.5 a 1 a 3 a 5 a 0.01 0.1 1 0.001 0.01 0.1 1 collector ? emitter satura- tion voltage (v) i b , base current (a) figure 8. saturation region t j = 25 c i c = 0.1 a 0.5 a 1 a 5 a 3 a pnp njw1302g npn NJW3281G 0.01 0.1 1 0.01 0.1 1 10 100 saturation voltage (v) i c , collecter current (a) figure 9. v ce(sat) , collector ? emitter saturation voltage i c /i b = 10 ? 30 c 25 c 125 c 0.01 0.1 1 0.01 0.1 1 10 100 i c , collecter current (a) figure 10. v ce(sat) , collector ? emitter saturation voltage saturation voltage (v) ? 30 c 25 c 125 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 base ? emitter voltage (v) i c , collecter current (a) figure 11. v be(on) , base ? emitter voltage 125 c ? 30 c 25 c i c /i b = 10 v ce = 5 v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 base ? emitter voltage (v) i c , collecter current (a) figure 12. v be(on) , base ? emitter voltage v ce = 5 v 125 c ? 30 c 25 c
NJW3281G (npn) njw1302g (pnp) http://onsemi.com 5 figure 13. output capacitance pnp njw1302g npn NJW3281G typical characteristics c ob , output capacitance (pf) v cb , collecter ? base voltage (v) figure 14. output capacitance 0 200 400 600 800 1000 1200 0 20406080100 c ob , output capacitance (pf) v cb , collecter ? base voltage (v) t j = 25 c f te s t = 1 mhz 0 200 400 600 800 1000 1200 0 102030405060708090100 t j = 25 c f te s t = 1 mhz 2000 4000 6000 8000 10000 12000 012345678910 figure 15. input capacitance c ib , input capacitance (pf) v eb , emitter ? base voltage (v) t j = 25 c f te s t = 1 mhz 2000 4000 6000 8000 10000 0246810 figure 16. input capacitance v eb , emitter ? base voltage (v) c ib , input capacitance (pf) t j = 25 c f te s t = 1 mhz
NJW3281G (npn) njw1302g (pnp) http://onsemi.com 6 figure 17. active region safe operating area v ce , collector emitter (volts) figure 18. active region safe operating area pnp njw1302g npn NJW3281G 100 1.0 0.1 1000 10 1.0 100 10 i c , collector current (amps) v ce , collector emitter (volts) 100 1.0 0.1 1000 10 1.0 100 10 i c , collector current (amps) 100 msec 10 msec 1 sec 100 msec 10 msec 1 sec there are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 17 and 18 is based on t j(pk) = 150 c; t c is variable depending on conditions. at high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
NJW3281G (npn) njw1302g (pnp) http://onsemi.com 7 package dimensions to ? 3p ? 3ld case 340ab ? 01 issue a g k l c e j h 123 4 d 3x s b m 0.25 a a p dim a min nom max millimeters 19.70 19.90 20.10 b 15.40 15.60 15.80 c 4.60 4.80 5.00 d 0.80 1.00 1.20 e 1.45 1.50 1.65 g 5.45 bsc h 1.20 1.40 1.60 j 0.55 0.60 0.75 k 19.80 20.00 20.20 l 18.50 18.70 18.90 u 5.00 ref p 3.30 3.50 3.70 q 3.10 3.20 3.50 w 2.80 3.00 3.20 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30mm from the terminal tip. 4. dimension a and b do not include mold flash, protrusions, or gate burrs. f 1.80 2.00 2.20 b g b q a (3 ) seating plane f u w style 1: pin 1. base 2. collector 3. emitter 4. collector style 2: pin 1. anode 2. cathode 3. anode 4. cathode style 3: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 njw3281/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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